Interposers including upwardly protruding dams, semiconductor device assemblies including the interposers, and methods

ABSTRACT

A dam for substantially laterally confining a quantity of encapsulant material over a region of a substrate, such as an interposer. The dam is configured to protrude upwardly from a surface of the interposer or other substrate. The interposer may be positioned at least partially around a slot or aperture through the substrate so as to laterally confine encapsulant material over the slot or aperture and over any intermediate conductive elements extending through the slot or aperture. The dam may be fabricated by stereolithography. A package including the interposer, the dam, and a semiconductor die to which the interposer is secured may include a sealing element between the interposer and the active surface of the die. All or part of the sealing element may also be fabricated using stereolithography. Methods and systems using machine vision in conjunction with stereolithography equipment are also disclosed.

CROSS-REFERENCE TO RELATED APPLICATION

[0001] This application is a continuation of application Ser. No.09/560,970, filed Apr. 28, 2000, pending.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates generally to interposers for use inchip-scale packages (CSPs), including ball grid array (BGA) packages.Particularly, the present invention relates to interposers that includeupwardly protruding dams configured to laterally confine encapsulantmaterial over a specified area of the interposer. The invention alsorelates to semiconductor device packages including the interposers andto methods of fabricating the upwardly protruding dams, the interposers,and assemblies including the interposers.

Semiconductor Device Packages

[0004] 2. Background of Related Art

[0005] Semiconductor devices, such as memory devices and processors, aregenerally fabricated in very large numbers. Typically, severalsemiconductor devices are fabricated on a wafer or other large scalesubstrate that includes a layer of semiconductor material (e.g.,silicon, gallium arsenide, or indium phosphide). The semiconductordevices are then singulated, or diced, from the wafer or other largescale substrate to provide semiconductor “chips” or dice.

[0006] Conventionally, semiconductor dice have been packaged forprotection and to facilitate the formation of electrical connections tothe small bond pads thereof. Conventional semiconductor device packagestypically include an assembly of a semiconductor die and a higher levelsubstrate board (e.g., a circuit board) or leads. Bond pads of thesemiconductor die are electrically connected (e.g., by wire bonds orotherwise) to contact pads of a higher level substrate or to leads. Theassembly may then be packaged. For example, assemblies that include asemiconductor die with leads connected to the bond pads thereof aretypically packaged by use of transfer molding techniques to secure theleads in place and to protect the active surface of the semiconductordie and the wire bonds or other intermediate conductive elements.Assemblies including a semiconductor die and a higher level substratemay be packaged by injection molding techniques or with a glob-top typeencapsulant, both of which protect the active surface of thesemiconductor die and the wire bonds or other intermediate conductiveelements.

[0007] Due to the ever-decreasing sizes of state of the art electronicdevices, conventional semiconductor device packages are relativelybulky. As a result, alternative semiconductor device packagingconfigurations have been developed to reduce the amount of area, or“real estate,” on circuit boards consumed by semiconductor devicepackages.

[0008] Among these state of the art semiconductor device packages arethe so-called chip-scale packages, the areas of which are substantiallythe same as or only slightly larger than the areas of the semiconductordice thereof. Chip-scale packages may include a semiconductor die and aninterposer superimposed over the semiconductor die. The bond pads of thesemiconductor die are electrically connected to contact pads of theinterposer, which are in turn electrically connected to a circuit boardor other carrier substrate through traces extending to other contactelements that mate with terminals on the circuit board or other carriersubstrate.

[0009] An exemplary ball grid array type chip-scale package 201 isillustrated in FIG. 1. Package 201 includes a semiconductor die 202 andan interposer 206 positioned over an active surface 203 of semiconductordie 202. Interposer 206 is secured to semiconductor die 202 with a layer215 of adhesive material. A quantity of underfill material 216 isintroduced between semiconductor die 202 and interposer 206 to fill anyremaining open areas therebetween.

[0010] Interposer 206 includes a slot 207 formed therethrough. Bond pads204 on an active surface 203 of semiconductor die 202 are exposedthrough slot 207. Bond pads 204 are connected by way of wire bonds 205or other intermediate conductive elements to corresponding first contactpads 208 on interposer 206. As illustrated, wire bonds 205 extendthrough slot 207. Each first contact pad 208 communicates with acorresponding second contact pad 209 on interposer 206 by way of aconductive trace 210 carried by interposer 206. Second contact pads 209may be arranged so as to reroute the output locations of bond pads 204.Thus, the locations of second contact pads 209 may also impartinterposer 206 with a desired footprint, and particularly one whichcorresponds to the arrangement of terminal pads on a carrier substrate(not shown) to which package 201 is to be connected. Bond pads 204, wirebonds 205, and first contact pads 208 are each protected by a quantityof an encapsulant material 211, such as a glob-top type encapsulant.

[0011] Package 201 is electrically connected to a carrier substrate byway of conductive structures 213, such as solder balls, connected tosecond contact pads 209 and corresponding contact pads of the carriersubstrate. Package 201 is configured to be connected to a carriersubstrate in an inverted, or flip-chip, fashion, which conserves realestate on the carrier substrate. It is also known in the art to connecta chip-scale package to a carrier substrate by way of wire bonds orother conductive elements. Such assemblies, packages and interposers aredisclosed, for example, in U.S. Pat. No. 5,719,440, issued to Walter L.Moden and assigned to the assignee of the invention disclosed andclaimed herein.

[0012] The introduction of underfill materials between a semiconductordie and an interposer secured thereto is somewhat undesirable since anadditional assembly step is required. Moreover, as conventionalunderfill materials flow into the spaces between a semiconductor die andan interposer, voids or bubbles may form and remain therein.

[0013] In addition, the use of glob-top type encapsulants to protect thebond pads and intermediate conductive elements of such chip-scalepackages is somewhat undesirable since glob-top encapsulants may flowlaterally over the second contact pads or conductive structuresprotruding therefrom. While more viscous encapsulant materials may beused, because viscous glob-top encapsulants typically cure with a convexsurface, the amount of encapsulant needed to adequately protect the bondwires or other intermediate conductive elements between the bond padsand first contact pads may result in a glob-top that protrudes anundesirable distance from the interposer, which may require the removalof some of the convex portion of the glob-top or the use of undesirablylong conductive elements between the second contact pads of theinterposer and the contact pads of the carrier substrate.

[0014] U.S. Pat. No. 5,714,800, issued to Patrick F. Thompson, disclosesan interposer with a stepped outer periphery. The first contact pads arelocated on the lower, peripheral portion of the interposer, while thesecond contact pads are positioned on the higher, central region of theinterposer. The vertical wall between the lower and higher regions ofthe interposer prevents liquid encapsulant material from flowinglaterally beyond the lower portion of the interposer and thus preventsthe liquid encapsulant material from flowing onto the second contactpads. As the lower, peripheral portion of the interposer must have asufficient thickness and rigidity to support the first contact padsthereon and since the difference in height between the peripheral andcentral regions of the interposer should be sufficient to facilitatecomplete encapsulation of an intermediate conductive element, such as abond wire, that is connected to and raised somewhat above a firstcontact pad, the stepped interposer is relatively thick and undesirablyadds to the overall thickness of a semiconductor device package of whichit is a part. Moreover, fabrication of the stepped interposer requiresadditional machining or alignment of layers to create a steppedperiphery. In addition, when an interposer with a stepped periphery isused, since the intermediate conductive elements and bond pads arelocated near the periphery of the semiconductor die-interposer assembly,it would by very difficult to encapsulate bond pads and intermediateconductive elements with a glob-top type encapsulant.

[0015] Accordingly, there is a need for a structure on an interposerthat prevents the lateral flow of glob-top type encapsulant materials.There is also a need for a structure that contains relatively lowviscosity encapsulant materials over desired areas of an interposer.

Stereolithography

[0016] In the past decade, a manufacturing technique termed“stereolithography,” also known as “layered manufacturing,” has evolvedto a degree where it is employed in many industries.

[0017] Essentially, stereolithography as conventionally practicedinvolves utilizing a computer to generate a three-dimensional (3-D)mathematical simulation or model of an object to be fabricated, suchgeneration usually effected with 3-D computer-aided design (CAD)software. The model or simulation is mathematically separated or“sliced” into a large number of relatively thin, parallel, usuallyvertically superimposed layers, each layer having defined boundaries andother features associated with the model (and thus the actual object tobe fabricated) at the level of that layer within the exterior boundariesof the object. A complete assembly or stack of all of the layers definesthe entire object, and surface resolution of the object is, in part,dependent upon the thickness of the layers.

[0018] The mathematical simulation or model is then employed to generatean actual object by building the object, layer by superimposed layer. Awide variety of approaches to stereolithography by different companieshas resulted in techniques for fabrication of objects from both metallicand non-metallic materials. Regardless of the material employed tofabricate an object, stereolithographic techniques usually involvedisposition of a layer of unconsolidated or unfixed materialcorresponding to each layer within the object boundaries, followed byselective consolidation or fixation of the material to at least apartially consolidated, or semisolid, state in those areas of a givenlayer corresponding to portions of the object, the consolidated or fixedmaterial also at that time being substantially concurrently bonded to alower layer of the object to be fabricated. The unconsolidated materialemployed to build an object may be supplied in particulate or liquidform, and the material itself may be consolidated or fixed, or aseparate binder material may be employed to bond material particles toone another and to those of a previously formed layer. In someinstances, thin sheets of material may be superimposed to build anobject, each sheet being fixed to a next lower sheet and unwantedportions of each sheet removed, a stack of such sheets defining thecompleted object. When particulate materials are employed, resolution ofobject surfaces is highly dependent upon particle size, whereas when aliquid is employed, surface resolution is highly dependent upon theminimum surface area of the liquid which can be fixed and the minimumthickness of a layer that can be generated. Of course, in either case,resolution and accuracy of object reproduction from the CAD file is alsodependent upon the ability of the apparatus used to fix the material toprecisely track the mathematical instructions indicating solid areas andboundaries for each layer of material. Toward that end, and dependingupon the layer being fixed, various fixation approaches have beenemployed, including particle bombardment (electron beams), disposing abinder or other fixative (such as by inkjet printing techniques), orirradiation using heat or specific wavelength ranges.

[0019] An early application of stereolithography was to enable rapidfabrication of molds and prototypes of objects from CAD files. Thus,either male or female forms on which mold material might be disposed maybe rapidly generated. Prototypes of objects might be built to verify theaccuracy of the CAD file defining the object and to detect any designdeficiencies and possible fabrication problems before a design wascommitted to large-scale production.

[0020] In more recent years, stereolithography has been employed todevelop and refine object designs in relatively inexpensive materials,and has also been used to fabricate small quantities of objects wherethe cost of conventional fabrication techniques is prohibitive for same,such as in the case of plastic objects conventionally formed byinjection molding. It is also known to employ stereolithography in thecustom fabrication of products generally built in small quantities orwhere a product design is rendered only once. Finally, it has beenappreciated in some industries that stereolithography provides acapability to fabricate products, such as those including closedinterior chambers or convoluted passageways, which cannot be fabricatedsatisfactorily using conventional manufacturing techniques. It has alsobeen recognized in some industries that a stereolithographic object orcomponent may be formed or built around another, pre-existing object orcomponent to create a larger product.

[0021] However, to the inventor's knowledge, stereolithography has yetto be applied to mass production of articles in volumes of thousands ormillions, or employed to produce, augment or enhance products includingother, pre-existing components in large quantities, where minutecomponent sizes are involved, and where extremely high resolution and ahigh degree of reproducibility of results are required. In particular,the inventor is not aware of the use of stereolithography to fabricatestructures for preventing the lateral flow of encapsulant materialsbeyond desired areas of interposers or other substrates. Furthermore,conventional stereolithography apparatus and methods fail to address thedifficulties of precisely locating and orienting a number ofpre-existing components for stereolithographic application of materialthereto without the use of mechanical alignment techniques or tootherwise assuring precise, repeatable placement of components.

SUMMARY OF THE INVENTION

[0022] The present invention includes a dam for use on an interposer.When secured to a surface of an interposer, the dam is configured toprotrude above the surface so as to prevent an encapsulant material fromflowing laterally beyond a desired area of the interposer. The presentinvention also includes interposers with one or more such upwardlyprotruding dams positioned thereon, as well as semiconductor deviceassemblies and packages including interposers with one or more upwardlyprotruding dams thereon.

[0023] Each upwardly protruding dam according to the present inventionis configured to be secured to a surface of an interposer. The upwardlyprotruding dams may be configured to fully or partially surround an areaof an interposer over which an encapsulant material is to be disposed.The upwardly protruding dams are configured to at least partiallylaterally confine a quantity of encapsulant material over at least aportion of the surface of the interposer. The upwardly protruding damsof the present invention may be fabricated by any known substrate orsemiconductor device component fabrication process. Preferably, upwardlyprotruding dams incorporating teachings of the present invention arefabricated from a photocurable polymer, or “photopolymer,” by way ofknown stereolithography processes, such as the hereinafter more fullydescribed stereolithography process. Each upwardly protruding dam mayinclude one layer or a plurality of superimposed, contiguous, mutuallyadhered layers of material. An upwardly protruding dam according to thepresent invention may be fabricated directly on an interposer orseparately therefrom, then secured thereto by known techniques, such asthe use of an adhesive material.

[0024] An interposer according to the present invention may include oneor more slots or apertures formed completely therethrough. In oneembodiment of the interposer, an elongate, substantially centrallylocated slot facilitates the formation of electrical connections fromthe bond pads of a semiconductor die with one or more substantiallycentrally located rows of bond pads to corresponding first contact padslocated near the slot of the interposer. Electrical traces carried bythe interposer connect each first contact pad to a corresponding secondcontact pad on an upper surface of the interposer opposite from thesemiconductor die. The second contact pads are disposed in an array overthe surface of the interposer. The upwardly protruding dam at leastpartially laterally surrounds the slot and at least the first contactpads of the interposer and, preferably, substantially completelylaterally surrounds the slot and first contact pads.

[0025] The interposer may be assembled with a semiconductor die byplacing one or more dielectric, adhesive strips between the activesurface of the semiconductor die and a lower surface of the interposer.The dielectric, adhesive strips at least partially laterally surroundthe bond pads on the active surface of the semiconductor die, as well asimpart stability to the assembly. The bond pads of the semiconductor diemay be electrically connected to the corresponding first contact pads ofthe interposer by way of known intermediate conductive elements, such aswire bonds, that extend through the one or more slots or apertures ofthe interposer.

[0026] In a semiconductor device package incorporating teachings of thepresent invention, a quantity of encapsulant material may be disposedover the one or more slots or apertures so as to electrically insulateeach of the intermediate conductive elements extending therethrough. Theone or more dams protruding upwardly from the upper surface of theinterposer at least partially laterally confine the encapsulantmaterial, preventing the encapsulant material from flowing laterallybeyond the one or more dams. If the upwardly protruding damsubstantially laterally surrounds the one or more slots and secondcontact pads, a low viscosity encapsulant material may be employed,facilitating the formation of a “glob-top” with a less convex, or evenno, meniscus. When the interposer includes such an upwardly protrudingdam and a low viscosity encapsulant material is used, the encapsulatedmass may actually have a substantially planar surface, reducing theoverall thickness of the semiconductor device package.

[0027] A semiconductor device package incorporating teachings of thepresent invention may also include a sealing element between theinterposer and the semiconductor die. The sealing element substantiallylaterally surrounds the bond pads of the semiconductor die and may be atleast partially formed by the one or more adhesive strips securing theinterposer to the active surface of the semiconductor die. The sealingelement may also include a sealing material, such as a photopolymer,disposed between the interposer and semiconductor die. When aphotopolymer is used to form at least a portion of the sealing element,the hereinafter more fully described stereolithography processes may beused to at least partially consolidate the photopolymer. A photopolymerportion of the sealing element may be located at or adjacent an outerperiphery of one or both of the interposer and semiconductor die oradjacent a periphery of the slot formed through the interposer.

[0028] According to another aspect, the present invention includes amethod for fabricating the dam, as well as a method for fabricating allor part of a sealing element from a photopolymer. In a preferredembodiment of the method, a computer-controlled, 3-D CAD initiatedprocess known as “stereolithography” or “layered manufacturing” is usedto fabricate the dam or sealing element. When stereolithographicprocesses are employed, each dam is formed as either a single layer or aseries of superimposed, contiguous, mutually adhered layers of material.

[0029] The stereolithographic method of fabricating the dams or sealingelements of the present invention preferably includes the use of amachine vision system to locate the interposers or other substrates onwhich the dams are to be fabricated, as well as the features or othercomponents on or associated with the interposers or other substrates(e.g., solder bumps, contact pads, conductive traces, etc.). The use ofa machine vision system directs the alignment of a stereolithographysystem with each interposer or other substrate for material dispositionpurposes. Accordingly, the interposers or other substrates need not beprecisely mechanically aligned with any component of thestereolithography system to practice the stereolithographic embodimentof the method of the present invention.

[0030] In a preferred embodiment, the dams to be fabricated upon orpositioned upon and secured to interposers in accordance with theinvention are fabricated using precisely focused electromagneticradiation in the form of an ultraviolet (UV) wavelength laser undercontrol of a computer and responsive to input from a machine visionsystem, such as a pattern recognition system, to fix or cure selectedregions of a layer of a liquid photopolymer material disposed on thesemiconductor device or other substrate.

[0031] Sealing elements may be stereolithographically fabricated on anassembly including a semiconductor die and an interposer positioned onthe active surface thereof.

[0032] Other features and advantages of the present invention willbecome apparent to those of ordinary skill in the art throughconsideration of the ensuing description, the accompanying drawings, andthe appended claims.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0033]FIG. 1 is a cross-sectional view of an exemplary chip-scalepackage with a glob-top type encapsulant placed over the intermediateconductive elements thereof;

[0034]FIG. 2 is a top view of a first embodiment of an interposerincluding a slot formed therethrough and an upwardly protruding damsecured to a surface of the interposer adjacent to and surrounding theslot;

[0035]FIG. 3 is a cross-sectional view of an assembly including theinterposer and dam of FIG. 2, taken along line 3-3 thereof, and asemiconductor die connected to the interposer;

[0036]FIG. 4 is a cross-sectional view of a semiconductor device packageincluding the assemble of FIG. 3, depicting an encapsulant materialdisposed over the slot and laterally confined by the upwardly protrudingdam and a sealing element between the interposer and the die andlaterally surrounding the bond pads of the die;

[0037]FIG. 5 is a side view of the semiconductor device package shown inFIG. 4;

[0038]FIG. 6 is another cross-sectional view of the semiconductor devicepackage shown in FIG. 4, which includes the interposer of FIG. 2, thecross-section being taken along line 6-6 of FIG. 2;

[0039]FIG. 6A is an enlarged, partial cross-sectional view of a packageincluding the assembly shown in FIG. 3, depicting a variation of thesealing element shown in FIGS. 2-6;

[0040]FIG. 6B is an enlarged, partial cross-sectional view of a packageincluding the assembly shown in FIG. 3, depicting another variation ofthe sealing element illustrated in FIGS. 2-6;

[0041]FIG. 7 is a perspective view of the semiconductor device packagedepicted in FIGS. 4-6;

[0042]FIG. 8 is a side view of a variation of the semiconductor devicepackage shown in FIGS. 4-7, wherein a shorter dam is secured to theinterposer and a higher viscosity encapsulant material is used toencapsulate the intermediate conductive elements;

[0043]FIG. 9 is a top view of another interposer with a slot formedtherethrough and an upwardly protruding dam secured to a surface of theinterposer adjacent an outer periphery of the interposer;

[0044]FIG. 10 is a cross-sectional view of an assembly including theinterposer and upwardly protruding dam shown in FIG. 9, taken along line10-10 thereof, and a semiconductor die connected thereto;

[0045]FIG. 11 is a cross-sectional view of a semiconductor devicepackage including the assembly shown in FIG. 10, an encapsulant disposedover a surface of the interposer and laterally confined by the upwardlyprotruding dam, and a sealing element disposed between the interposerand the semiconductor die and laterally surrounding the bond pads of thedie;

[0046]FIG. 12 is a side view of the semiconductor device package shownin FIG. 11;

[0047]FIG. 13 is another cross-sectional view of the semiconductordevice package shown in FIGS. 11 and 12, which includes the interposershown in FIG. 9, the cross-section being taken along line 13-13 of FIG.9;

[0048]FIG. 14 is a perspective view of the semiconductor device packagedepicted in FIGS. 11-13;

[0049]FIG. 15 is a top schematic representation of an interposer withanother embodiment of dam, including a plurality of separate elementssecured to the surface of the interposer adjacent a centrally located,elongate slot formed therethrough;

[0050]FIG. 16 is a top schematic representation of an interposer withanother embodiment of a dam secured to a surface thereof, the interposerincluding peripherally located slots and centrally located contact pads,the dam including two upwardly protruding members configured andpositioned to confine encapsulant material over the peripherally locatedslots of the interposer and to prevent encapsulant material from flowingonto the centrally located contact pads or onto conductive structuressecured to the contact pads;

[0051]FIG. 17 is a schematic representation of an exemplarystereolithography apparatus that may be employed in the method of thepresent invention to fabricate the dams of the present invention; and

[0052]FIG. 18 is a partial cross-sectional side view of an interposer orother substrate disposed on a platform of a stereolithographic apparatusfor the formation of a dam on the interposer or other substrate.

DETAILED DESCRIPTION OF THE INVENTION

[0053] With reference to FIG. 2, an exemplary interposer 10incorporating teachings of the present invention is shown. Interposer 10is a substantially planar member formed from, for example, FR-4 resin,semiconductor material (e.g., silicon), or any other known substratematerial and having an upper surface 11 and a lower surface 12 (seeFIGS. 2-6). As illustrated in FIG. 2, interposer 10 includes an elongateslot 14 formed therethrough. Slot 14 is positioned substantially alongthe center of interposer 10. Interposer 10 also includes first contactpads 15, or contacts, located proximate slot 14. Electrical traces 16carried by interposer 10 connect each first contact pad 15 to acorresponding second contact pad 17 carried on upper surface 11 ofinterposer 10. As depicted, second contact pads 17 are arranged in anarray over upper surface 11.

[0054] A dam 20 secured to upper surface 11 of interposer 10 protrudesupwardly therefrom. Dam 20 at least partially laterally surrounds slot14 and first contact pads 15. As shown in FIG. 2, dam 20 substantiallycompletely laterally surrounds slot 14 and first contact pads 15. Secondcontact pads 17 are located laterally outside of dam 20.

[0055]FIG. 3 depicts an assembly 30 including interposer 10 and asemiconductor die 32 with bond pads 34 positioned on an active surface36 thereof in one or more centrally located rows 35 (see FIG. 6). Asillustrated, two parallel strips of adhesive film 38 are placed betweenactive surface 36 of semiconductor die 32 and lower surface 12 ofinterposer 10 so as to secure interposer 10 to semiconductor die 32.Intermediate conductive elements 40, which are illustrated as wire bondsbut may also be any other known type of intermediate conductiveelements, extend through slot 14 to electrically connect bond pads 34 ofsemiconductor die 32 to corresponding first contact pads 15 ofinterposer 10.

[0056] Assembly 30 may also include a sealing element 42 that laterallysurrounds and seals bond pads 34 of semiconductor die 32. Sealingelement 42 may comprise adhesive film 38 and, in lieu of two strips ofadhesive film 38, adhesive film 38 may be cut to form a frame, theaperture of which lies over bond pads 34. Alternatively, or in addition,sealing element 42 may include a quantity of material 44 disposedbetween active surface 36 of semiconductor die 32 and lower surface 12of interposer 10. Preferably, material 44 is a photopolymer. In FIG. 3,sealing element 42 is depicted with material 44 being located adjacent(e.g., beneath) at least the end edges of slot 14.

[0057]FIG. 6A illustrates a variation of a sealing element 42″, whichincludes a vertically disposed end member 43″ that is continuous andintegral with ends 45 of dam 20. Thus, a quantity of material 44″forming each end member 43″ of sealing element 42″ and each end 45 ofdam 20 extends substantially vertically upward from active surface 36 ofsemiconductor die 32 and in contact with a corresponding end of slot 14.As shown in FIG. 6A, the long sides 47 of sealing element 42 are notcontinuous with the corresponding sides of dam 20. If, however, theedges 48 of adhesive film 38 strips are aligned with the long edges 49of slot 14, as depicted in FIG. 6B, another variation of a sealingelement 42□□ incorporating teachings of the present invention, whichincludes end members 43□□ similar to end members 43″ illustrated in FIG.6A, along with adhesive film 38 strips would substantially laterallyseal bond pads 34 of semiconductor die 32, as well as any portions ofactive surface 36 that are covered by adhesive film 38 and sealingelement 42□□.

[0058] As shown in FIG. 3, assembly 30 also includes a conductivestructure or element 46 (e.g., balls, pillars, or other structuresformed from metal, conductive elastomer, conductor-filled elastomer, orother conductive material) protruding from each second contact pad 17 ofinterposer 10.

[0059] Turning now to FIGS. 4-7, a semiconductor device package 50including assembly 30 of semiconductor die 32 and interposer 10 with dam20 thereon is illustrated. Package 50 also includes a quantity ofencapsulant material 52 disposed laterally within the confines of theone or more upwardly protruding dams 20 positioned on upper surface 11of interposer 10 and over at least slot 14, intermediate conductiveelements 40, and first contact pads 15. Encapsulant material 52substantially encapsulates intermediate conductive elements 40 so as toelectrically insulate intermediate conductive elements 40 from oneanother and from the exterior of package 50. As illustrated in FIGS.2-7, upwardly protruding dam 20 completely laterally surrounds slot 14and first contact pads 15. Thus, upwardly protruding dam 20 willlaterally confine encapsulant materials 52 of any viscosity, includingconventional glob-top materials such as silicones, as well as very lowviscosity encapsulant materials 52. As a result, encapsulant material 52of package 50 has a surface 54 that is less convexly curved than thatexhibited by conventional glob-tops. As shown in FIGS. 4-7, encapsulantmaterial 52 of package 50 exhibits a substantially planar surface 54.Since surface 54 may be substantially planar, the overall thickness ofpackage 50 is reduced relative to packages that employ conventionalglob-top type encapsulant materials of greater viscosity and thus havingconvexly curved surfaces 54. In addition, when surface 54 issubstantially planar, encapsulant material 52 is not as likely as asemiconductor device package with a convexly curved glob-top typeencapsulant to interfere with the flip-chip connection of conductivestructures 46 to the terminals of a higher level substrate. By way ofcontrast, FIG. 8 illustrates a package 50 wherein a higher viscosityencapsulant material 52″ is used and surface 54″, therefore, has aconvex shape, or meniscus. When a higher viscosity encapsulant materialis used, the height of dam 20 need not exceed the height of bond wiresor other intermediate conductive elements 40 (see FIGS. 3 and 4)extending through slot 14 (see FIGS. 3 and 4).

[0060]FIG. 9 schematically depicts a second embodiment of a dam 20′incorporating teachings of the present invention disposed on an uppersurface 11 of an interposer 10. Dam 20′ is configured to be positionedadjacent outer periphery 18 of interposer 10 and to at least partiallylaterally surround slot 14, first contact pads 15, and second contactpads 17. As illustrated, dam 20′ substantially completely laterallysurrounds slot 14, first contact pads 15, and second contact pads 17.

[0061] Referring to FIG. 10, an assembly 30′ of a semiconductor die 32and interposer 10 with dam 20′ protruding upwardly therefrom isillustrated. Interposer 10 is secured to active surface 36 ofsemiconductor die 32 by way of a quantity of adhesive 39 disposedbetween active surface 36 and lower surface (not shown) of interposer10. Intermediate conductive elements 40 electrically connect bond pads34 of semiconductor die 32 to corresponding first contact pads 15 ofinterposer 10.

[0062] Referring now to FIGS. 9 and 12, assembly 30′ may also include asealing element 42′ located between semiconductor die 32 and interposer10 and completely laterally surrounding bond pads 34 and substantiallylaterally sealing bond pads 34 from the environment external asemiconductor device package 50′ (see FIGS. 11-14) that includesassembly 30′. Sealing element 42′ may be at least partially formed byadhesive 39. Alternatively, or in addition, sealing element 42′ mayinclude a quantity of material 44, such as a photopolymer, disposedbetween active surface 36 of semiconductor die 32 and lower surface 12of interposer 10. Preferably, material 44 is a photopolymer. FIGS. 9 and12 depict sealing element 42′ as including two elongate strips ofadhesive 39 extending adjacent and substantially parallel to row 35 ofbond pads 34. Sealing element 42′ also includes material 44 locatedbetween strips of adhesive 39 adjacent (e.g., beneath) opposite, outerperipheral edges 18 a, 18 b of interposer 10 or adjacent oppositeperipheral edges 33 a, 33 b of semiconductor die 32.

[0063]FIG. 10 also illustrates assembly 30′ as including conductivestructures 46 (e.g., balls, pillars, or other structures formed frommetal, conductive elastomer, conductor-filled elastomer, or otherconductive material) protruding from each second contact pad 17 ofinterposer 10.

[0064] Referring now to FIGS. 11-14, a semiconductor device package 50′including assembly 30′ with semiconductor die 32, interposer 10, and dam20′ is illustrated. Package 50′ also includes a glob-top typeencapsulant 52′ formed from a known type of encapsulant material,disposed laterally within the confines of the one or more upwardlyprotruding dams 20′ positioned on upper surface 11 of interposer 10 soas to fill slot 14 and to be disposed thereover, as well as overintermediate conductive elements 40, first contact pads 15, and secondcontact pads 17. Encapsulant 52′ substantially encapsulates intermediateconductive elements 40 so as to electrically insulate intermediateconductive elements 40 from one another and from the exterior of package50′. Encapsulant 52′ also laterally surrounds and supports a baseportion of each conductive structure 46, at the junction of conductivestructure 46 and the corresponding second contact pad 17 to whichconductive structure 46 is secured. When dam 20′ completely laterallysurrounds second contact pads 17, a low viscosity encapsulant materialmay be used as encapsulant 52′. Thus, encapsulant 52′ would have asubstantially planar surface 54′ and each conductive structure 46 wouldprotrude substantially the same distance from surface 54′ of encapsulant52′.

[0065]FIG. 15 depicts another embodiment of dam 20″ incorporatingteachings of the present invention. As shown in FIG. 15, dam 20″includes several separate dam elements 20 a″, 20 b″, etc. that are eachsecured to an upper surface 11″ of an interposer 10″. Each dam element20 a″, 20 b″, etc. is positioned adjacent a substantially centrallylocated elongate slot 14″ formed through interposer 10″. First contactpads 15″ are positioned adjacent slot 14″, between slot 14″ and dam 20″,and are connected by way of conductive traces 16″ to correspondingsecond contact pads 17″ that are positioned adjacent an outer periphery18″ of interposer 10″. Although dam elements 20 a″, 20 b″, etc. arespaced apart from one another, dam 20″ will laterally confine higherviscosity encapsulant materials (e.g., conventional glob-top typeencapsulants) over slot 14″ and any intermediate conductive elementsextending therethrough.

[0066] Another embodiment of a dam 20□□ according to the presentinvention is illustrated in FIG. 16. Dam 20□□ includes an outer member20 a□□ and an inner member 20 b□□ that are positioned concentricallyrelative to one another. As FIG. 16 shows, dam 20□□ is useful on aninterposer 10□□ with slots 140□□ therethrough and located adjacent outerperiphery 18□□ to contain encapsulant material over slots 14□□. Slots14□□ are located upon interposer 10□□ to align over the peripherallylocated bond pads of a semiconductor die to be assembled with interposer10□□. Interposer 10□□ is configured to reroute the bond pad locationsfrom their peripheral locations on the semiconductor die to an arrayover a surface of interposer 10□□. Accordingly, interposer 10□□ includesfirst contact pads 15□□ positioned adjacent slots 14□□ and connected byway of conductive traces 16□□ to corresponding second contact pads 17□□disposed in an array across the center 19□□ of an upper surface 11□□ ofinterposer 10□□. Conductive elements connecting the bond pads of asemiconductor die to first contact pads 15□□ of interposer 10□□ may beencapsulated by disposing an encapsulant material between outer member20 a□□ of dam 20□□ and inner member 20 b□□ thereof.

[0067] While dams 20, 20′,20″,20□□ are preferably substantiallysimultaneously fabricated on or secured to a collection of interposers10, 10″, 10□□, such as prior to singulating interposers 10, 10″, 10□□from a wafer, dams 20, 20′, 20″, 20□□ may also be fabricated on orsecured to collections of individual interposers 10, 10″, 10□□ or othersubstrates, or to individual interposers 10, 10″, 10□□ or othersubstrates. As another alternative, dams 20, 20′, 20″, 20□□ may besubstantially simultaneously fabricated on or secured to a collection ofmore than one type of interposer 10, 10′, 10″ or another substrate.

[0068] Dams 20, 20′, 20″, 20□□ may be fabricated directly on interposers10, 10″, 10□□ or other substrates. Alternatively, dams 20, 20′, 20″,20□□ may be fabricated separately from interposers 10, 10′, 10″ or othersubstrates, then secured thereto as known in the art, such as by the useof a suitable adhesive.

[0069] While any known semiconductor device fabrication technique may beused to fabricate dams 20, 20′, 20″, 20□□ (e.g., forming and patterninga layer of material, such as silicon dioxide or a photoresist), dams 20,20′, 20″, 20□□ are preferably fabricated from a photo-curable polymer,or “photopolymer,” by stereolithographic processes. When fabricateddirectly on an interposer 10, 10″, 10□□ or other substrate, dams 20,20′, 20″, 20□□ may be made either before or after interposer 10, 10″,10□□ has been assembled with a semiconductor die 32.

[0070] Photopolymer portions of sealing element 42 may likewise befabricated on an interposer 10, 10″, 10□□ or other substrate before orafter assembly thereof with a semiconductor die 32, but are preferablyfabricated on an assembly, such as assembly 30 (see FIG. 3) or assembly30′ (see FIG. 10), including an interposer 10, 10″, 10□□ or othersubstrate and a semiconductor die 32.

[0071] For simplicity, the ensuing description is limited to anexplanation of a method of fabricating dams 20 on an interposer 10 priorto securing conductive structures 46 to contact pads 15 of interposer10. As should be appreciated by those of skill in the art, however, themethod described herein is also useful for fabricating dams 20′, 20″,20□□, as well as other embodiments of dams incorporating teachings ofthe present invention, on an interposer 10, 10″, 10□□ or othersubstrate.

Stereolithography Apparatus and Methods

[0072]FIG. 17 schematically depicts various components, and operation,of an exemplary stereolithography apparatus 80 to facilitate thereader's understanding of the technology employed in implementation ofthe method of the present invention, although those of ordinary skill inthe art will understand and appreciate that apparatus of other designsand manufacture may be employed in practicing the method of the presentinvention. The preferred, basic stereolithography apparatus forimplementation of the method of the present invention, as well asoperation of such apparatus, are described in great detail in UnitedStates Patents assigned to 3D Systems, Inc. of Valencia, Calif., suchpatents including, without limitation, U.S. Pat. Nos. 4,575,330;4,929,402; 4,996,010; 4,999,143; 5,015,424; 5,058,988; 5,059,021;5,059,359; 5,071,337; 5,076,974; 5,096,530; 5,104,592; 5,123,734;5,130,064; 5,133,987; 5,141,680; 5,143,663; 5,164,128; 5,174,931;5,174,943; 5,182,055; 5,182,056; 5,182,715; 5,184,307; 5,192,469;5,192,559; 5,209,878; 5,234,636; 5,236,637; 5,238,639; 5,248,456;5,256,340; 5,258,146; 5,267,013; 5,273,691; 5,321,622; 5,344,298;5,345,391; 5,358,673; 5,447,822; 5,481,470; 5,495,328; 5,501,824;5,554,336; 5,556,590; 5,569,349; 5,569,431; 5,571,471; 5,573,722;5,609,812; 5,609,813; 5,610,824; 5,630,981; 5,637,169; 5,651,934;5,667,820; 5,672,312; 5,676,904; 5,688,464; 5,693,144; 5,695,707;5,711,911; 5,776,409; 5,779,967; 5,814,265; 5,850,239; 5,854,748;5,855,718; 5,855,836; 5,885,511; 5,897,825; 5,902,537; 5,902,538;5,904,889; 5,943,235; and 5,945,058. The disclosure of each of theforegoing patents is hereby incorporated herein by this reference.

[0073] With continued reference to FIG. 17 and as noted above, a 3-D CADdrawing of an object to be fabricated in the form of a data file isplaced in the memory of a computer 82 controlling the operation ofstereolithography apparatus 80 if computer 82 is not a CAD computer inwhich the original object design is effected. In other words, an objectdesign may be effected in a first computer in an engineering or researchfacility and the data files transferred via wide or local area network,tape, disc, CD-ROM, or otherwise as known in the art to computer 82 ofstereolithography apparatus 80 for object fabrication.

[0074] The data is preferably formatted in an STL (forSTereoLithography) file, STL being a standardized format employed by amajority of manufacturers of stereolithography equipment. Fortunately,the format has been adopted for use in many solid-modeling CAD programs,so translation from another internal geometric database format is oftenunnecessary. In an STL file, the boundary surfaces of an object aredefined as a mesh of interconnected triangles.

[0075] Stereolithography apparatus 80 also includes a reservoir 84(which may comprise a removable reservoir interchangeable with otherscontaining different materials) of an unconsolidated material 86 to beemployed in fabricating the intended object. In the currently preferredembodiment, the unconsolidated material 86 is a liquid, photo-curablepolymer, or “photopolymer,” that cures in response to light in the UVwavelength range. The surface level 88 of unconsolidated material 86 isautomatically maintained at an extremely precise, constant magnitude bydevices known in the art responsive to output of sensors withinapparatus 80 and preferably under control of computer 82. A supportplatform or elevator 90, precisely vertically movable in fine,repeatable increments responsive to control of computer 82, is locatedfor movement downward into and upward out of material 86 in reservoir84.

[0076] An object may be fabricated directly on platform 90, or on asubstrate disposed on platform 90. When the object is to be fabricatedon a substrate disposed on platform 90, the substrate may be positionedon platform 90 and secured thereto by way of one or more base supports122 (FIG. 18). Such base supports 122 may be fabricated before orsimultaneously with the stereolithographic fabrication of one or moreobjects on platform 90 or a substrate disposed thereon. These basesupports 122 may support, or prevent lateral movement of, the substraterelative to a surface 100 of platform 90. Base supports 122 may alsoprovide a perfectly horizontal reference plane for fabrication of one ormore objects thereon, as well as facilitate the removal of a substratefrom platform 90 following the stereolithographic fabrication of one ormore objects on the substrate. Moreover, where a so-called “recoater”blade 102 is employed to form a layer of material on platform 90 or asubstrate disposed thereon, base supports 122 may preclude inadvertentcontact of recoater blade 102, to be described in greater detail below,with surface 100 of platform 90.

[0077] Stereolithography apparatus 80 has a UV wavelength range laserplus associated optics and galvanometers (collectively identified aslaser 92) for controlling the scan of laser beam 96 in the X-Y planeacross platform 90. Laser 92 has associated therewith a mirror 94 toreflect beam 96 downwardly as beam 98 toward surface 100 of platform 90.Beam 98 is traversed in a selected pattern in the X-Y plane, that is tosay, in a plane parallel to surface 100, by initiation of thegalvanometers under control of computer 82 to at least partially cure,by impingement thereon, selected portions of material 86 disposed oversurface 100 to at least a partially consolidated (e.g., semisolid)state. The use of mirror 94 lengthens the path of the laser beam,effectively doubling same, and provides a more vertical beam 98 thanwould be possible if the laser 92 itself were mounted directly aboveplatform surface 100, thus enhancing resolution.

[0078] Referring now to FIGS. 17 and 18, data from the STL filesresident in computer 82 is manipulated to build an object, such as a dam20, various configurations of which are illustrated in FIGS. 2-16, orbase supports 122, one layer at a time. Accordingly, the datamathematically representing one or more of the objects to be fabricatedare divided into subsets, each subset representing a slice or layer ofthe object. The division of data is effected by mathematicallysectioning the 3-D CAD model into at least one layer, a single layer ora “stack” of such layers representing the object. Each slice may be fromabout 0.0001 to about 0.0300 inch thick. As mentioned previously, athinner slice promotes higher resolution by enabling better reproductionof fine vertical surface features of the object or objects to befabricated.

[0079] When one or more base supports 122 are to bestereolithographically fabricated, base supports 122 may be programmedas a separate STL file from the other objects to be fabricated. Theprimary STL file for the object or objects to be fabricated and the STLfile for base support(s) 122 are merged.

[0080] Before fabrication of a first layer for a base support 122 or anobject to be fabricated is commenced, the operational parameters forstereolithography apparatus 80 are set to adjust the size (diameter ifcircular) of the laser light beam used to cure material 86. In addition,computer 82 automatically checks and, if necessary, adjusts by meansknown in the art the surface level 88 of material 86 in reservoir 84 tomaintain same at an appropriate focal length for laser beam 98. U.S.Pat. No. 5,174,931, referenced above and previously incorporated hereinby reference, discloses one suitable level-control system.Alternatively, the height of mirror 94 may be adjusted responsive to adetected surface level to cause the focal point of laser beam 98 to belocated precisely at surface 88 of material 86 if level 88 is permittedto vary, although this approach is more complex. Platform 90 may then besubmerged in material 86 in reservoir 84 to a depth equal to thethickness of one layer or slice of the object to be formed, and theliquid surface 88 level is readjusted as required to accommodatematerial 86 displaced by submergence of platform 90. Laser 92 is thenactivated so laser beam 98 will scan unconsolidated (e.g., liquid orpowdered) material 86 disposed over surface 100 of platform 90 to atleast partially consolidate (e.g., polymerize to at least a semisolidstate) material 86 at selected locations, defining the boundaries of afirst layer 122A of base support 122 and filling in solid portionsthereof. Platform 90 is then lowered by a distance equal to a thicknessof second layer 122B, and laser beam 98 scanned over selected regions ofthe surface of material 86 to define and fill in the second layer 122Bwhile simultaneously bonding the second layer to the first. The processmay then be repeated, as often as necessary, layer by layer, until basesupport 122 is completed. Platform 90 is then moved relative to mirror94 to form any additional base support 122 on platform 90 or a substratedisposed thereon or to fabricate objects upon platform 90, base support122, or a substrate, as provided in the control software. The number oflayers required to erect base support 122 or one or more other objectsto be formed depends upon the height of the object or objects to beformed and the desired layer thickness 108, 110. The layers of astereolithographically fabricated structure with a plurality of layersmay have different thicknesses.

[0081] If a recoater blade 102 is employed, the process sequence issomewhat different. In this instance, surface 100 of platform 90 islowered into unconsolidated (e.g., liquid) material 86 below surfacelevel 88 a distance greater than a thickness of a single layer ofmaterial 86 to be cured, then raised above surface level 88 untilplatform 90, a substrate disposed thereon, or a structure being formedon platform 90 is precisely one layer's thickness below blade 102. Blade102 then sweeps horizontally over platform 90 or (to save time) at leastover a portion thereof on which one or more objects are to be fabricatedto remove excess material 86 and leave a film of precisely the desiredthickness. Platform 90 is then lowered so that the surface of the filmand surface level 88 are coplanar and the surface of the unconsolidatedmaterial 86 is still. Laser 92 is then initiated to scan with laser beam98 and define the first layer 130. The process is repeated, layer bylayer, to define each succeeding layer 130 and simultaneously bond sameto the next lower layer 130 until all of the layers of the object orobjects to be fabricated are completed. A more detailed discussion ofthis sequence and apparatus for performing same is disclosed in U.S.Pat. No. 5,174,931, previously incorporated herein by reference.

[0082] As an alternative to the above approach to preparing a layer ofmaterial 86 for scanning with laser beam 98, a layer of unconsolidated(e.g., liquid) material 86 may be formed on surface 100 of supportplatform 90, on a substrate disposed on platform 90, or on one or moreobjects being fabricated by lowering platform 90 to flood material 86over surface 100, over a substrate disposed thereon, or over the highestcompleted layer of the object or objects being formed, then raisingplatform 90 and horizontally traversing a so-called “meniscus” bladehorizontally over platform 90 to form a layer of unconsolidated materialhaving the desired thickness over platform 90, the substrate, or each ofthe objects being formed. Laser 92 is then initiated and a laser beam 98scanned over the layer of unconsolidated material to define at least theboundaries of the solid regions of the next higher layer of the objector objects being fabricated.

[0083] Yet another alternative to layer preparation of unconsolidated(e.g., liquid) material 86 is to merely lower platform 90 to a depthequal to that of a layer of material 86 to be scanned, and to thentraverse a combination flood bar and meniscus bar assembly horizontallyover platform 90, a substrate disposed on platform 90, or one or moreobjects being formed to substantially concurrently flood material 86thereover and to define a precise layer thickness of material 86 forscanning.

[0084] All of the foregoing approaches to liquid material flooding andlayer definition and apparatus for initiation thereof are known in theart and are not material to practice of the present invention, so nofurther details relating thereto will be provided herein.

[0085] In practicing the present invention, a commercially availablestereolithography apparatus operating generally in the manner as thatdescribed above with respect to stereolithography apparatus 80 of FIG.17 is preferably employed, but with further additions and modificationsas hereinafter described for practicing the method of the presentinvention. For example and not by way of limitation, the SLA-250/50HR,SLA-5000 and SLA-7000 stereolithography systems, each offered by 3DSystems, Inc, of Valencia, Calif., are suitable for modification.Photopolymers believed to be suitable for use in practicing the presentinvention include Cibatool SL 5170 and SL 5210 resins for theSLA-250/50HR system, Cibatool SL 5530 resin for the SLA-5000 and 7000systems, and Cibatool SL 7510 resin for the SLA-7000 system. All ofthese photopolymers are available from Ciba Specialty ChemicalsCorporation.

[0086] By way of example and not limitation, the layer thickness ofmaterial 86 to be formed, for purposes of the invention, may be on theorder of about 0.0001 to 0.0300 inch, with a high degree of uniformity.It should be noted that different material layers may have differentheights, so as to form a structure of a precise, intended total heightor to provide different material thicknesses for different portions ofthe structure. The size of the laser beam “spot” impinging on surface 88of material 86 to cure same may be on the order of 0.001 inch to 0.008inch. Resolution is preferably ±0.0003 inch in the X-Y plane (parallelto surface 100) over at least a 0.5 inch×0.25 inch field from a centerpoint, permitting a high resolution scan effectively across a 1.0inch×0.5 inch area. Of course, it is desirable to have substantiallythis high a resolution across the entirety of surface 100 of platform 90to be scanned by laser beam 98, such area being termed the field ofexposure,” such area being substantially coextensive with the visionfield of a machine vision system employed in the apparatus of theinvention as explained in more detail below. The longer and moreeffectively vertical the path of laser beam 96/98, the greater theachievable resolution.

[0087] Referring again to FIG. 17, it should be noted thatstereolithography apparatus 80 useful in the method of the presentinvention includes a camera 140 which is in communication with computer82 and preferably located, as shown, in close proximity to optics andmirror 94 located above surface 100 of support platform 90. Camera 140may be any one of a number of commercially available cameras, such ascapacitive-coupled discharge (CCD) cameras available from a number ofvendors. Suitable circuitry as required for adapting the output ofcamera 140 for use by computer 82 may be incorporated in a board 142installed in computer 82, which is programmed as known in the art torespond to images generated by camera 140 and processed by board 142.Camera 140 and board 142 may together comprise a so-called “machinevision system” and, specifically, a “pattern recognition system” (PRS),the operation of which will be described briefly below for a betterunderstanding of the present invention. Alternatively, a self-containedmachine vision system available from a commercial vendor of suchequipment may be employed. For example, and without limitation, suchsystems are available from Cognex Corporation of Natick, Mass. Forexample, the apparatus of the Cognex BGA Inspection Package™ or the SMDPlacement Guidance Package™ may be adapted to the present invention,although it is believed that the MVS-8000™ product family and theCheckpoint® product line, the latter employed in combination with CognexPatMax™ software, may be especially suitable for use in the presentinvention.

[0088] It is noted that a variety of machine vision systems are inexistence, examples of which and their various structures and uses aredescribed, without limitation, in U.S. Pat. Nos. 4,526,646; 4,543,659;4,736,437; 4,899,921; 5,059,559; 5,113,565; 5,145,099; 5,238,174;5,463,227; 5,288,698; 5,471,310; 5,506,684; 5,516,023; 5,516,026; and5,644,245. The disclosure of each of the immediately foregoing patentsis hereby incorporated by this reference.

Stereolithographic Fabrication of the Dams

[0089] In order to facilitate fabrication of one or more dams 20 inaccordance with the method of the present invention with apparatus 80, adata file representative of the size, configuration, thickness andsurface topography of, for example, a particular type and design ofinterposer 10 or other substrate upon which one or more dams 20 are tobe mounted is placed in the memory of computer 82. Also, if it isdesired that the dams 20 be so positioned on interposer 10 or anothersubstrate taking into consideration features of a higher-level substrateto which a semiconductor device package (e.g., packages 50, 50′ shown inFIGS. 4-7 and 11-14, respectively) including interposer 10 is to beconnected, a data file representative of the higher-level substrate andthe features thereof may be placed in memory.

[0090] One or more interposers 10 or other substrates may be placed onsurface 100 of platform 90 for fabrication of dams 20 thereon. If one ormore interposers 10 or other substrates are to be held on or supportedabove platform 90 by stereolithographically formed base supports 122,one or more layers of material 86 are sequentially disposed on surface100 and selectively altered by use of laser 92 to form base supports122.

[0091] Camera 140 is then activated to locate the position andorientation of each interposer 10 or other substrate upon which dams 20are to be fabricated. The features of each interposer 10 or othersubstrate are compared with those in the data file residing in memory,the locational and orientational data for each interposer or othersubstrate then also being stored in memory. It should be noted that thedata file representing the design size, shape and topography for eachinterposer 10 or other substrate may be used at this juncture to detectphysically defective or damaged interposers 10 or other substrates priorto fabricating dams 20 thereon or before conducting further processingor assembly of interposers 10 with other semiconductor devicecomponents. Accordingly, such damaged or defective interposers 10 orother substrates may be deleted from the process of fabricating dams 20,from further processing, or from assembly with other components. Itshould also be noted that data files for more than one type (size,thickness, configuration, surface topography) of each interposer orother substrate may be placed in computer memory and computer 82programmed to recognize not only the locations and orientations of eachinterposer 10 or other substrate, but also the type of interposer 10 orother substrate at each location upon platform 90 so that material 86may be at least partially consolidated by laser beam 98 in the correctpattern and to the height required to define dams 20 in the appropriate,desired locations on each interposer 10 or other substrate.

[0092] Continuing with reference to FIGS. 17 and 18, the one or moreinterposers 10 or other substrates on platform 90 may then be submergedpartially below the surface level 88 of unconsolidated material 86 to adepth greater than the thickness of a first layer of material 86 to beat least partially consolidated (e.g., cured to at least a semisolidstate) to form the lowest layer 130 of each dam 20 at the appropriatelocation or locations on each interposer 10 or other substrate, thenraised to a depth equal to the layer thickness, surface 88 of material86 being allowed to become calm. Photopolymers that are useful asmaterial 86 exhibit a desirable dielectric constant, low shrinkage uponcure, are of sufficient (i.e., semiconductor grade) purity, exhibit goodadherence to other semiconductor device materials, and have a similarcoefficient of thermal expansion (CTE) to the material of interposer 10or another substrate which material 86 contacts. Preferably, the CTE ofmaterial 86 is sufficiently similar to that of interposer 10 or anothersubstrate to prevent undue stressing thereof during thermal cycling of asemiconductor device assembly or package including interposer 10 intesting, subsequent processing, and subsequent normal operation.Exemplary photopolymers exhibiting these properties are believed toinclude, but are not limited to, the above-referenced resins from CibaSpecialty Chemical Company. One area of particular concern indetermining resin suitability is the substantial absence of mobile ions,and specifically fluorides.

[0093] Laser 92 is then activated and scanned to direct beam 98, undercontrol of computer 82, toward specific locations of surface 88 relativeto each interposer 10 or other substrate to effect the aforementionedpartial cure of material 86 to form a first layer 20A of each dam 20.Platform 90 is then lowered into reservoir 84 and raised a distanceequal to the desired thickness of another layer 20B of each dam 20, andlaser 92 is activated to add another layer 20B to each dam 20 underconstruction. This sequence continues, layer by layer, until each of thelayers of each dam 20 have been completed.

[0094] In FIG. 18, the first layer of dam 20 is identified by numeral20A, and the second layer is identified by numeral 20B. Likewise, thefirst layer of base support 122 is identified by numeral 122A and thesecond layer thereof is identified by numeral 122B. As illustrated, bothbase support 122 and dam 20 have only two layers. Dams 20 with anynumber of layers are, however, within the scope of the presentinvention. The use of a large number of layers may be employed tosubstantially simulate the curvature of a solder ball to be encompassedthereby.

[0095] Each layer 20A, 20B of dam 20 is preferably built by firstdefining any internal and external object boundaries of that layer withlaser beam 98, then hatching solid areas of dam 20 located within theobject boundaries with laser beam 98. An internal boundary of a layermay comprise aperture 26, a through-hole, a void, or a recess in dam 20,for example. If a particular layer includes a boundary of a void in theobject above or below that layer, then laser beam 98 is scanned in aseries of closely spaced, parallel vectors so as to develop a continuoussurface, or skin, with improved strength and resolution. The time ittakes to form each layer depends upon the geometry thereof, the surfacetension and viscosity of material 86, and the thickness of that layer.

[0096] Alternatively, dams 20 may each be formed as a partially curedouter skin extending above a surface of interposer 10 or anothersubstrate and forming a dam within which unconsolidated material 86 maybe contained. This may be particularly useful where the dams 20 protrudea relatively high distance 56 from the surface of interposer 10 oranother substrate. In this instance, support platform 90 may besubmerged so that material 86 enters the area within dam 20, raisedabove surface level 88, and then laser beam 98 activated and scanned toat least partially cure material 86 residing within dam 20 or,alternatively, to merely cure a “skin,” a final cure of the material ofthe dams 20 being effected subsequently by broad-source UV radiation ina chamber, or by thermal cure in an oven. In this manner, dams 20 ofextremely precise dimensions may be formed of material 86 bystereolithography apparatus 80 in minimal time.

[0097] Once dams 20, or at least the outer skins thereof, have beenfabricated, platform 90 is elevated above surface level 88 of material86 and platform 90 is removed from stereolithography apparatus 80, alongwith any substrate (e.g., interposer 10) disposed thereon and anystereolithographically fabricated structures, such as dams 20. Excess,unconsolidated material 86 (e.g., excess uncured liquid) may be manuallyremoved from platform 90, from any substrate disposed thereon, and fromdams 20. Each interposer 10 or other substrate is removed from platform90, such as by cutting the substrate free of base supports 122.Alternatively, base supports 122 may be configured to readily releaseeach interposer 10 or other substrate. As another alternative, a solventmay be employed to release base supports 122 from platform 90. Suchrelease and solvent materials are known in the art. See, for example,U.S. Pat. No. 5,447,822 referenced above and previously incorporatedherein by reference.

[0098] Dams 20 and interposers 10 or other substrates may also becleaned by use of known solvents that will not substantially degrade,deform, or damage dams 20, interposers 10, or other substrates to whichdams 20 are secured.

[0099] As noted previously, dams 20 may then require postcuring. Dams 20may have regions of unconsolidated material contained within a boundaryor skin thereof, or material 86 may be only partially consolidated(e.g., polymerized or cured) and exhibit only a portion (typically 40%to 60%) of its fully consolidated strength. Postcuring to completelyharden dams 20 may be effected in another apparatus projecting UVradiation in a continuous manner over dams 20 or by thermal completionof the initial, UV-initiated partial cure.

[0100] It should be noted that the height, shape, or placement of eachdam 20 on each specific interposer 10 or other substrate may vary, againresponsive to output of camera 140 or one or more additional cameras 144or 146, shown in broken lines, detecting the protrusion of unusuallyhigh (or low) preplaced solder balls which could affect the desireddistance 56 that dams 20 will protrude from the surface of interposer 10or another substrate. In any case, laser 92 is again activated to atleast partially cure material 86 residing on each interposer 10 or othersubstrate to form the layer or layers of each dam 20.

[0101] Although FIGS. 17 and 18 illustrate the stereolithographicfabrication of dams 20 on a substrate, such as an interposer 10, dams 20may be fabricated separately from a substrate, then secured to asubstrate by known processes, such as by the use of a suitable adhesivematerial.

[0102] The use of a stereolithographic process as exemplified above tofabricate dams 20 is particularly advantageous since a large number ofdams 20 may be fabricated in a short time, the dam height and positionare computer controlled to be extremely precise, wastage ofunconsolidated material 86 is minimal, solder coverage of passivationmaterials is avoided, and the stereolithography method requires minimalhandling of interposers 10 or other substrates.

[0103] Stereolithography is also an advantageous method of fabricatingdams 20 according to the present invention since stereolithography maybe conducted at substantially ambient temperature, the small spot sizeand rapid traverse of laser beam 98 resulting in negligible thermalstress upon a substrate, such as interposer 10, or on the conductivetraces 16 or contact pads 15, 17 thereof.

[0104] The stereolithography fabrication process may also advantageouslybe conducted at the wafer level or on multiple substrates, savingfabrication time and expense. As the stereolithography method of thepresent invention recognizes specific types of interposers 10 or othersubstrates, variations between individual interposers 10 or othersubstrates are accommodated. Accordingly, when the stereolithographymethod of the present invention is employed, dams 20 may besimultaneously fabricated on different types of interposers 10 or othersubstrates.

[0105] While the present invention has been disclosed in terms ofcertain preferred embodiments, those of ordinary skill in the art willrecognize and appreciate that the invention is not so limited.Additions, deletions and modifications to the disclosed embodiments maybe effected without departing from the invention claimed herein.Similarly, features from one embodiment may be combined with those ofanother while remaining within the scope of the invention.

What is claimed is:
 1. A method for protecting conductive elements of asemiconductor device package, comprising: providing an assemblyincluding: at least one semiconductor die; and at least one interposerpositioned adjacent to an active surface of said at least onesemiconductor die, at least one intermediate conductive element thatelectrically connects a bond pad of said at least one semiconductor dieand a corresponding contact pad of said at least one interposerextending through a slot formed through said at least one interposer;forming at least one upwardly protruding dam at least partially aroundsaid at least one slot on a surface of said at least one interposeropposite from said at least one semiconductor die; and introducing anencapsulant into said at least one slot and over said at least oneintermediate conductive element, said at least one upwardly protrudingdam at least partially laterally confining said encapsulant.
 2. Themethod of claim 1, wherein said forming comprises: forming at least onelayer of substantially unconsolidated material over at least a portionof said surface; and at least partially consolidating said substantiallyunconsolidated material at at least one selected region of said at leastone layer.
 3. The method of claim 2, wherein said at least partiallyconsolidating comprises leaving said substantially unconsolidatedmaterial at least another region of said layer in a substantiallyunconsolidated state.
 4. The method of claim 2, wherein said formingsaid at least one upwardly protruding dam further comprises: repeatingsaid forming said at least one layer of substantially unconsolidatedmaterial and said at least partially consolidating at least once.
 5. Themethod of claim 2, further comprising, following said at least partiallyconsolidating: removing material which remains substantiallyunconsolidated.
 6. The method of claim 2, wherein said at leastpartially consolidating comprises subjecting said at least one selectedregion to focused radiation.
 7. The method of claim 6, wherein saidsubjecting comprises subjecting said at least one selected region to UVradiation.
 8. The method of claim 1, further comprising: introducingsubstantially unconsolidated material between said at least oneinterposer and said at least one semiconductor die.
 9. The method ofclaim 8, further comprising: at least partially consolidating saidsubstantially unconsolidated material in at least one region betweensaid at least one interposer and said at least one semiconductor die.10. The method of claim 9, wherein said at least partially consolidatingcomprises forming a sealing member between said at least one interposerand said at least one semiconductor die.
 11. The method of claim 9,wherein said at least partially consolidating comprises at leastpartially consolidating substantially unconsolidated material adjacentto an outer periphery of at least one of said at least one interposerand said at least one semiconductor die.
 12. The method of claim 9,wherein said at least partially consolidating comprises at leastpartially consolidating substantially unconsolidated material adjacentto a periphery of said at least one slot.
 13. The method of claim 9,wherein said substantially consolidating comprises exposing said atleast one region to focused radiation.
 14. The method of claim 9,wherein said substantially consolidating comprises subjecting said atleast one region to UV radiation.
 15. The method of claim 1, whereinsaid forming comprises: supporting said assembly on a platform with abackside of said at least one semiconductor die facing said platform;submerging said assembly in liquid resin to form a layer of said liquidresin over said second surface of said substrate of said at least oneinterposer; and subjecting at least one regions of said layer to acontrollable beam of radiation to change said liquid resin in said atleast one region to an at least semisolid state.
 16. The method of claim15, wherein said subjecting comprises subjecting said at least oneregion to UV radiation.
 17. The method of claim 15, further comprising:repeating said submerging and said subjecting to form at least oneadditional layer of said at least one upwardly protruding dam.
 18. Themethod of claim 1, further comprising: storing data including at leastone physical parameter of said at least one interposer in computermemory; and using said data in conjunction with a machine vision systemto recognize a location and orientation of the at least one interposer.19. The method of claim 18, further comprising: using said data, inconjunction with said machine vision system, to effect said forming saidat least one upwardly protruding dam.
 20. The method of claim 1, furthercomprising: storing data including at least one physical parameter ofsaid at least one upwardly protruding dam and using said data to effectsaid forming.
 21. A method for fabricating an interposer, comprising:providing at least one interposer substrate that includes at least oneslot therethrough; and forming at least one upwardly protruding dam atleast partially around said at least one slot on a surface of said atleast one interposer.
 22. The method of claim 21, wherein said formingcomprises stereolithographically fabricating said at least one upwardlyprotruding dam.
 23. The method of claim 21, further comprising: storingdata including at least one physical parameter of said at least oneupwardly protruding dam and using said data to effect said forming. 24.The method of claim 21, further comprising: storing data including atleast one physical parameter of said at least one interposer substratein computer memory.
 25. The method of claim 24, further comprising:recognizing a location and orientation of said at least one interposersubstrate to effect said forming at a desired location.
 26. The methodof claim 25, wherein said recognizing is effected with a machine visionsystem.